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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5053-4SL TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level n HIGH POWER P1dB=36.5dBm at 5.0GHz to 5.3GHz n HIGH GAIN G1dB=9.5dB at 5.0GHz to 5.3GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 G CONDITIONS UNIT dBm dB A dB % dBc A C MIN. 35.5 8.5 -42 TYP. MAX. 36.5 9.5 1.1 36 -45 1.1 1.3 0.6 1.3 80 VDS=10V f= 5.0 to 5.3GHz add IM3 IDS2 Tch Two-Tone Test Po=25.5dBm (Single Carrier Level) (VDS X IDS + Pin - P1dB) X Rth(c-c) Recommended Gate Resistance(Rg) : 150 (Max.) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL CONDITIONS VDS= 3V IDS= 1.5A VDS= 3V IDS= 15mA VDS= 3V VGS= 0V IGS= -50A Channel to Case UNIT mS V A V C/W MIN. -1.0 -5 TYP. 900 -2.5 2.6 4.5 MAX. -4.0 6.5 gm VGSoff IDSS VGSO Rth(c-c) u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jul. 2006 TIM5053-4SL ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage Temperature SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 3.5 23.1 175 -65 to +175 PACKAGE OUTLINE (2-11D1B) 0.60.15 4.0 MIN. Unit in mm 4-C1.2 (1) (1) Gate (2) Source (3) Drain 12.90.2 1.60.3 5.0 MAX. 2.60.3 4.0 MIN. 3.20.3 (2) (2) (3) 170.3 210.2 11.0 MAX. +0.1 0.1 -0.05 12 HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 0.2 MAX. TIM5053-4SL RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=10V IDS1.1A Pout(dBm) 37 36 35 34 Pin=27.0dBm 5.0 5.1 5.2 5.3 Frequency (GHz) Output Power(Pout) vs. Input Power(Pin) 39 freq.=5.3GHz 38 37 36 VDS=10V IDS1.1A 80 Pout 70 60 50 40 Pout(dBm) 35 34 33 32 31 30 20 22 24 26 28 30 add 30 20 10 Pin(dBm) 3 add(%) TIM5053-4SL Power Dissipation vs. Case Temperature 30 20 PT (W) 10 0 0 40 80 120 160 200 Tc (*Z ) IM3 vs. Output Power Characteristics -10 VDS=10V IDS1.1A -20 freq.=5.3GHz f=5MHz -30 IM3(dBc) -40 -50 -60 21 23 25 27 29 31 Pout(dBm) @Single carrier level 4 |
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